| PART |
Description |
Maker |
| BAV199 Q62702-A921 |
Silicon Low Leakage Diode Array (Low-leakage applications Medium speed switching times Connected in series)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BAV170 Q62702-A920 |
From old datasheet system
Silicon Low Leakage Diode Array (Low leakage applications Medium speed switching times Common cathode) 硅低漏二极管阵列（低泄漏应用中速切换时间普通阴极）
|
SIEMENS A G
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| TN5D51 |
ExPD (Excellent-Performance Power & RF Device) Separately-Excited Step-Down Switching Regulator (12V Output type)
|
Sanyo Semicon Device
|
| NP043AN |
Silicon NPN epitaxial planar type (Tr1)
|
Panasonic
|
| XN0A312 |
Silicon NPN epitaxial planar type(Tr1)
|
Panasonic Semiconductor
|
| NP043A3 |
Silicon NPN epitaxial planar type (Tr1)
|
Panasonic
|
| NP04390 |
Silicon NPN epitaxial planar type (Tr1)
|
Panasonic
|
| 0603ESDA |
0603ESDA-TR1 ESD Suppressor PolySurg TR Series
|
Cooper Bussmann, Inc.
|
| UP0431NG |
Silicon NPN epitaxial planar type (Tr1)
|
Panasonic
|
| UP04316G |
Silicon NPN epitaxial planar type (Tr1)
|
Panasonic
|
| KF4N80F |
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
|
MORNSUN Science& Technology Ltd.
|
